DocumentCode :
884871
Title :
Trapezoidal i-v characteristics in GaAs tunnel diodes
Author :
Agusta, B. ; Nanavati, R.P.
Volume :
54
Issue :
10
fYear :
1966
Firstpage :
1498
Lastpage :
1499
Keywords :
Frequency; Gallium arsenide; Life testing; Microwave devices; Ohmic contacts; Roentgenium; Semiconductor diodes; Signal to noise ratio; Tuning; Tunneling;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.5173
Filename :
1447103
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=884871
