A new model for including discrete dopant ions into Monte Carlo simulations

Author

Ramey, Stephen M. ; Ferry, David K.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

2

Issue

4

fYear

2003

Firstpage

193

Lastpage

197

Abstract

A new method for including discrete dopants into Monte Carlo device simulation is presented. The method uses a molecular dynamics treatment of the electron-electron and electron-ion interaction that includes quantum mechanical effects via an effective potential. Modeling the positive ions with an effective potential results in an energy minimum of 50.7 meV at the positive ion, which correlates well to common donor energy levels in silicon. We find that the method produces the expected mobility reduction in the I_D-V_G characteristics of thin SOI MOSFETs.

Keywords

MOSFET; Monte Carlo methods; carrier mobility; doping profiles; ion implantation; molecular dynamics method; semiconductor device models; semiconductor doping; 50.7 meV; Monte Carlo simulations; common donor energy levels; discrete dopant ions; effective potential; electron-electron interaction; electron-ion interaction; mobility; molecular dynamics treatment; quantum mechanical effects; reduction; thin SOI MOSFETs; Charge carrier processes; Electrons; Energy states; Lattices; MOSFETs; Monte Carlo methods; Quantum mechanics; Semiconductor device doping; Semiconductor process modeling; Silicon on insulator technology;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2003.820797

Filename

1264868