Title :
Free Carrier Absorption in Silicon
Author :
Schroder, Dieter K. ; Thomas, Noel R. ; Swartz, John C.
fDate :
2/1/1978 12:00:00 AM
Abstract :
Free carrier absorption in heavily doped layers reduces the useful photon flux in the photoconductive region of extrinsic Si infrared detectors. A simple theory is developed which predicts the transmissivity of such layers as a function of their sheet resistance and the wavelength of the radiation. Experimental data over the 2.5-20 μm wavelength and 5-500 Omega/square sheet resistance range are given for both diffused and ion-implanted layers and also for polysilicon gates. The temperature dependence of both transmissivity and sheet resistance is investigated from 20 to 300 K.
Keywords :
Degradation; Effective mass; Electromagnetic wave absorption; Infrared detectors; Optical imaging; Photoconductivity; Photodetectors; Photonic band gap; Semiconductor impurities; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051012
