DocumentCode
884982
Title
Free Carrier Absorption in Silicon
Author
Schroder, Dieter K. ; Thomas, Noel R. ; Swartz, John C.
Volume
13
Issue
1
fYear
1978
fDate
2/1/1978 12:00:00 AM
Firstpage
180
Lastpage
187
Abstract
Free carrier absorption in heavily doped layers reduces the useful photon flux in the photoconductive region of extrinsic Si infrared detectors. A simple theory is developed which predicts the transmissivity of such layers as a function of their sheet resistance and the wavelength of the radiation. Experimental data over the 2.5-20 μm wavelength and 5-500 Omega/square sheet resistance range are given for both diffused and ion-implanted layers and also for polysilicon gates. The temperature dependence of both transmissivity and sheet resistance is investigated from 20 to 300 K.
Keywords
Degradation; Effective mass; Electromagnetic wave absorption; Infrared detectors; Optical imaging; Photoconductivity; Photodetectors; Photonic band gap; Semiconductor impurities; Silicon;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1978.1051012
Filename
1051012
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