50-nm fully depleted SOI CMOS technology with HfO2 gate dielectric and TiN gate

In this paper, we demonstrate for the first time CMOS thin-film metal gate FDSOI devices using HfO₂ gate dielectric at the 50-nm physical gate length. Symmetric V_T is achieved for long-channel nMOS and pMOS devices using midgap TiN single metal gate with undoped channel and high-k dielectric. The devices show excellent performance with a I_on=500 μA/μm and I_off=10 nA/μm at V_DD=1.2 V for nMOSFET and I_on=212 μA/μm and I_off=44 pA/μm at V_DD=-1.2 V for pMOSFET, with a CET=30 Å and a gate length of 50 nm. DIBL and SS values as low as 70 mV/V nand 77 mV/dec, respectively, are obtained with a silicon film thickness of 14 nm. Ring oscillators with 15 ps stage delay at V_DD=1.2 V are also realized.