Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

Free-standing chitosan membranes with high proton conductivity are prepared by a simple coating-peeling process. Laterally coupled flexible indium-zinc oxide electricdouble-layer transistors with dual in-plane gates are fabricated on such chitosan membranes for the first time. The operation voltage, subthreshold swing, and field-effect mobility are estimated to be 1.0 V, 119 mV/decade, and 1.2 cm²/V· s, respectively. Finally, “AND” logic operation is experimentally demonstrated with two in-plane gates as the input terminals. Such free-standing laterally coupled flexible transistors have potential applications in biosensors and biocompatible electronics.