DocumentCode
885371
Title
Radiation-induced increase in surface recombination velocity of thermally oxidized silicon structures
Author
Fitzgerald, D.J.
Volume
54
Issue
11
fYear
1966
Firstpage
1601
Lastpage
1602
Keywords
Capacitance measurement; Current measurement; DC generators; Diodes; Distortion measurement; Force measurement; Silicon; Spontaneous emission; Velocity measurement; Voltage measurement;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1966.5217
Filename
1447147
Link To Document