Title :
New GaAs quantum wires on
Author :
Fukui, T. ; Ando, Shin
Author_Institution :
NTT Basic Res. Labs., Tokyo, Japan
fDate :
3/6/1989 12:00:00 AM
Abstract :
New GaAs quantum wires are fabricated on
Keywords :
CVD coatings; III-V semiconductors; gallium arsenide; semiconductor growth; semiconductor quantum wells; 10 nm; 2DEG; GaAs; Shubnikov-de Haas oscillations; channel widths; crystallographic facets; growth conditions; metalorganic chemical vapour deposition; quantum wires; selective area growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890282
