DocumentCode :
885410
Title :
Emitter sidewall junction capacitance in double-diffused transistors
Author :
Rumin, N. ; Lawrence, H.
Volume :
54
Issue :
11
fYear :
1966
Firstpage :
1606
Lastpage :
1607
Keywords :
Capacitance; Continuous wavelet transforms; Difference equations; Government; Impurities; Niobium compounds;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.5220
Filename :
1447150
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=885410
