DocumentCode
885445
Title
Wafer-scale integration-a fault-tolerant procedure
Author
Aubusson, Russell C. ; Catt, Ivor
Volume
13
Issue
3
fYear
1978
fDate
6/1/1978 12:00:00 AM
Firstpage
339
Lastpage
344
Abstract
Considers a new approach to full-slice technology in relation to existing procedures for achieving this goal. Under external control a chain of good chips is created to form a long serial memory from an array of identical chips on a full slice. Bad chips are automatically bypassed without requiring any pre- or post-programming of the metallization and without any prior knowledge of the distribution of faulty chips on the wafer. Computer simulations of chain formation are described which demonstrate the feasibility of creating such serial memories at practicable dice-yield levels. The proposed logic design is summarized and its verification by TTL simulation is noted. The inherent fault and failure tolerance of the design are discussed and the potential problem areas of short-circuit chips, double-level metallization, spiral branching, thermal dissipation, and noise/pattern sensitivity are described together with suggested solutions.
Keywords
Digital simulation; Integrated circuit technology; Integrated memory circuits; Large scale integration; digital simulation; integrated circuit technology; integrated memory circuits; large scale integration; Assembly; Circuit faults; Costs; Fault tolerance; Integrated circuit reliability; Integrated circuit technology; Metallization; Testing; Very large scale integration; Wiring;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1978.1051050
Filename
1051050
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