Title :
A new SCCD specific measurement technique to determine the effective fast interface state density
Author :
Klar, Heinrich ; Mauthe, Manfred ; Pfleiderer, Hans-JÖrg
fDate :
6/1/1978 12:00:00 AM
Abstract :
Taking into account the thermally generated minority carriers to determine the background charge level along a SCCD, a measurement technique is described to obtain an effective fast interface state density N/SUB SSeff/. Compared to other SCCD specific methods the authors achieve better accuracy. The measurement technique is simple to apply and is useful to determine very small values of N/SUB SSeff/.
Keywords :
Charge-coupled devices; Interface electron states; charge-coupled devices; interface electron states; Charge transfer; Computer interfaces; Electrodes; Electron traps; Frequency; Interface states; Measurement techniques; Performance loss; Tellurium; Testing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051055
