Title :
Multigigahertz varactorless Si bipolar VCQ IC
Author_Institution :
Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
3/12/1992 12:00:00 AM
Abstract :
A high-performance varactorless VCO is introduced, that uses a capacitively-coupled current amplifier as the active device. The test VCO IC realised in a 2 mu m Si bipolar process exhibits a maximum centre frequency of 2.5 GHz, a time jitter of 2.5 ps at 2 GHz, and temperature coefficient of less than 100 p.p.m./ degrees C.
Keywords :
MMIC; bipolar integrated circuits; microwave oscillators; variable-frequency oscillators; 2 GHz; 2 micron; 2.5 GHz; Si; bipolar VCQ IC; capacitively-coupled current amplifier; external microstrip line; maximum centre frequency; temperature coefficient; time jitter; varactorless VCO;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920346
