Title :
Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GaInAsP/GaInAsP quantum-well lasers
Author :
Barrau, J. ; Brousseau, B. ; Calvas, B. ; Emery, J.Y. ; Simes, R.J. ; Starck, C. ; Goldstein, L.
Author_Institution :
CNRS, INSA, Toulouse, France
fDate :
3/12/1992 12:00:00 AM
Abstract :
The first theoretical evaluation is reported of the effect of biaxial compression on the quantum-well GaxIn1-xAs/Ga0.20InAs0.45P and Ga0.20In0.80AsyP1-y/Ga0.20In0.80As0 .45P0.55 laser threshold current density. Reference is made to known experimental results, and a comparison carried out of the potentialities of the two types of laser.
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser theory; semiconductor junction lasers; Ga 0.2In 0.8As yP 1-y-Ga 0.2In 0.8As 0.45P 0.55; Ga xIn 1-xAs-Ga 0.2InAs 0.45P; biaxial compression; compressively strained; quantum-well lasers; semiconductor lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920348
