DocumentCode :
885576
Title :
Zinc-doping of
Author :
Minagawa, S. ; Kondow, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
25
Issue :
6
fYear :
1989
fDate :
3/6/1989 12:00:00 AM
Firstpage :
413
Lastpage :
414
Abstract :
Zinc-doping into
Keywords :
aluminium compounds; gallium compounds; indium compounds; semiconductor doping; semiconductor epitaxial layers; vapour phase epitaxial growth; zinc; atmospheric metalorganic vapour phase epitaxy; doping efficiency; hole concentration; saturation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890284
Filename :
21056
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=885576
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