• DocumentCode
    885576
  • Title

    Zinc-doping of

  • Author

    Minagawa, S. ; Kondow, M.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    25
  • Issue
    6
  • fYear
    1989
  • fDate
    3/6/1989 12:00:00 AM
  • Firstpage
    413
  • Lastpage
    414
  • Abstract
    Zinc-doping into
  • Keywords
    aluminium compounds; gallium compounds; indium compounds; semiconductor doping; semiconductor epitaxial layers; vapour phase epitaxial growth; zinc; atmospheric metalorganic vapour phase epitaxy; doping efficiency; hole concentration; saturation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890284
  • Filename
    21056