Title :
Properties of Be-implanted planar GaAs p-n junctions
Author :
Helix, Max J. ; Vaidyanathan, K.V. ; Streetman, Ben G.
fDate :
8/1/1978 12:00:00 AM
Abstract :
The fabrication and characteristics of planar junctions in GaAs formed by Be ion implantation are discussed. The critical processing step is shown to be the use of a carefully deposited oxygen-free Si/SUB 3/N/SUB 4/ encapsulation during post-implantation annealing. Forward and reverse characteristics are presented for Be-implanted junctions formed by encapsulating with SiO/SUB 2/, Si/SUB x/O/SUB y/N/SUB z/, or Si/SUB 3/N/SUB 4/ layers prior to annealing at 900°C. Junctions which exhibit leakage current density of ~2×10/SUP -7/ A/cm/SUP 2/ at 80 V reverse bias and breakdown voltage >200 V have been fabricated using RF-plasma deposited Si/SUB 3/N/SUB 4/ layers as the encapsulant.
Keywords :
Beryllium; Gallium arsenide; III-V semiconductors; Integrated circuit technology; Ion implantation; beryllium; gallium arsenide; integrated circuit technology; ion implantation; p-n homojunctions; Annealing; Dielectric substrates; Encapsulation; Fabrication; Forward contracts; Gallium arsenide; Impurities; Ion implantation; Leakage current; P-n junctions;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051072
