DocumentCode
885717
Title
Modelling and measurement of surface impurity profiles of laterally diffused regions
Author
Lee, Hee-Gook ; Dutton, Robert W. ; Sansbury, James D. ; Moll, John L.
Volume
13
Issue
4
fYear
1978
fDate
8/1/1978 12:00:00 AM
Firstpage
455
Lastpage
461
Abstract
Analytic solutions for two-dimensional diffused profiles are obtained for a drive-in in an inert ambient and in an oxidizing ambient. For both cases, the impurity profiles have the same lateral dependence. An experiment which extracts the surface impurity profile near a diffusion mask edge is described. Test structures for this purpose have been fabricated using a CMOS process.
Keywords
Diffusion in solids; Doping profiles; Impurity distribution; Integrated circuit technology; Ion implantation; Semiconductor doping; diffusion in solids; doping profiles; impurity distribution; integrated circuit technology; ion implantation; semiconductor doping; CMOS process; Electric variables; Equations; Helium; Laboratories; Measurement techniques; Semiconductor device modeling; Semiconductor impurities; Silicon; Testing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1978.1051076
Filename
1051076
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