1.57 mu m InGaAsP/InP surface emitting lasers by angled focus ion beam etching

Author

Lee, Henry P ; Scherer, Axel ; Beebe, E.D. ; Hong, W.P. ; Bhat, Ritesh ; Koza, M.A.

Author_Institution

Bell Commun. Res., Red Bank, NJ, USA

Volume

28

Issue

6

fYear

1992

fDate

3/12/1992 12:00:00 AM

Firstpage

580

Lastpage

582

Abstract

The characteristics of 1.57 mu m InGaAsP/InP surface emitting lasers based on an in-plan ridged structure and 45 degrees beam deflectors defined by angled focused ion beam (FIB) etching are reported. With an externally integrated beam deflector, threshold currents and emission spectra identical to conventional edge emitting lasers are achieved. These results show that FIB etching is a very promising technique for the definition of high quality mirrors and beam deflectors on semiconductor heterostructures for a variety of integrated optoelectronic devices.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical workshop techniques; semiconductor junction lasers; semiconductor technology; sputter etching; 1.57 micron; 45 degrees beam deflectors; FIB etching; InGaAsP-InP; angled focus ion beam etching; emission spectra; externally integrated beam deflector; folded cavity; high quality mirrors; in-plan ridged structure; integrated optoelectronic devices; semiconductor heterostructures; semiconductor lasers; surface emitting lasers; threshold currents;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19920366

Filename

126511