Title :
A 12-18 GHz medium-power GaAs MESFET amplifier
Author :
Niclas, Karl B. ; Gold, Richard B. ; Wilser, Walter T. ; Hitchens, William R.
Abstract :
Two medium-power 12-18 GHz GaAs FET amplifiers, one single-ended and one balanced, have been developed. A minimum output power across the Ku-band of 200 mW with an associated gain of 4.0 dB was achieved with the balanced module. The transistor used in this study has gate dimensions of 300/spl times/1/spl mu/m. The technology, RF performance, and characterization of the transistor are discussed in detail, as are the design and performance of both single-ended and balanced amplifier modules.
Keywords :
Field effect transistor circuits; Gallium arsenide; Microwave amplifiers; Power amplifiers; Schottky gate field effect transistors; Solid-state microwave circuits; Wideband amplifiers; field effect transistor circuits; gallium arsenide; microwave amplifiers; power amplifiers; solid-state microwave circuits; wideband amplifiers; Bandwidth; Broadband amplifiers; FETs; Frequency; Gallium arsenide; Low-noise amplifiers; MESFETs; Power amplifiers; Power generation; Solid state circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051088
