• DocumentCode
    885855
  • Title

    JFET´s fabricated in a standard IC process for bipolar transistors

  • Author

    Meijer, Gerard C M ; Verweijen, Frans L J

  • Volume
    13
  • Issue
    4
  • fYear
    1978
  • fDate
    8/1/1978 12:00:00 AM
  • Firstpage
    530
  • Lastpage
    532
  • Abstract
    A new method for the fabrication of n- and p-channel JFETs in a standard IC process for bipolar transistors is presented. Using special layout techniques, which are based on well-known principles, JFETs of good performance are obtained, provided a tightly controlled photoresist process is available.
  • Keywords
    Integrated circuit technology; Junction gate field effect transistors; integrated circuit technology; junction gate field effect transistors; Bipolar integrated circuits; Bipolar transistors; Capacitance; Current supplies; Frequency conversion; Isolation technology; Master-slave; Merging; Stacking; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1978.1051091
  • Filename
    1051091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=885855