Title :
JFET´s fabricated in a standard IC process for bipolar transistors
Author :
Meijer, Gerard C M ; Verweijen, Frans L J
fDate :
8/1/1978 12:00:00 AM
Abstract :
A new method for the fabrication of n- and p-channel JFETs in a standard IC process for bipolar transistors is presented. Using special layout techniques, which are based on well-known principles, JFETs of good performance are obtained, provided a tightly controlled photoresist process is available.
Keywords :
Integrated circuit technology; Junction gate field effect transistors; integrated circuit technology; junction gate field effect transistors; Bipolar integrated circuits; Bipolar transistors; Capacitance; Current supplies; Frequency conversion; Isolation technology; Master-slave; Merging; Stacking; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051091
