DocumentCode :
885919
Title :
Molybdenum gate MOS applied to an AM/FM digital frequency synthesizer
Author :
Ohgishi, Tsutomu ; Doi, Atsumasa ; Akiyama, Toru ; Enomoto, Noboru
Volume :
13
Issue :
5
fYear :
1978
fDate :
10/1/1978 12:00:00 AM
Firstpage :
555
Lastpage :
560
Abstract :
An n-channel molybdenum self-aligned gate MOS technology has been developed and applied to an AM/FM digital frequency synthesizer. A high-frequency programmable divider operating at 180 MHz has been achieved by the use of molybdenum, low parasitic capacitance structures and zero-threshold MOS transistors, while maintaining conventional design rules. Molybdenum gate MOS has enabled the realization of a single-chip system, which consists of a directly programmable divider for the AM/FM local oscillators, a reference counter, a phase comparator, a circuit for dial tuning, and memories for storing the frequencies for 16 stations. A differential comparator has been fabricated on the LSI chip to simplify digital tuning in the receiver.
Keywords :
Digital integrated circuits; Field effect integrated circuits; Frequency synthesizers; Integrated circuit technology; Large scale integration; Molybdenum; digital integrated circuits; field effect integrated circuits; frequency synthesizers; integrated circuit technology; large scale integration; molybdenum; Circuit optimization; Conductivity; Counting circuits; Frequency conversion; Frequency synthesizers; Large scale integration; Local oscillators; MOSFETs; Parasitic capacitance; Silicon;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1978.1051099
Filename :
1051099
Link To Document :
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