Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses

Author

Liu, Yongxun ; Matsukawa, Takashi ; Endo, Kazuhiko ; Masahara, Meishoku ; O´Uchi, Shin-Ichi ; Ishii, Kenichi ; Yamauchi, Hiromi ; Tsukada, Junichi ; Ishikawa, Yuki ; Suzuki, Eiichi

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki

Volume

28

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

517

Lastpage

519

Abstract

Cointegration of titanium nitride (TiN)-gate high-performance tied-gate three-terminal FinFETs with symmetric gate-oxide thicknesses (t_ox1=t_ox2=1.7 nm) and variable threshold-voltage V_th independent-gate four-terminal (4T) FinFETs with asymmetric gate-oxide thicknesses (t_ox1=1.7 nm for the driving-gate-oxide, and t_ox2=3.4 or 7.0 nm for the control-gate-oxide) has been successfully developed using conventional reactive sputtering, two-step Si-fin and gate-oxide formation, and resist etch-back processes. A significantly improved subthreshold slope and an extremely low OFF-state current I_off are experimentally confirmed in the asymmetric gate-oxide thickness 4T FinFETs by increasing the control-gate-oxide thickness to twice or more the driving-gate-oxide thickness. The developed techniques are attractive for high-performance and low-power FinFET very large-scale integration circuits

Keywords

MOSFET; low-power electronics; titanium compounds; TiN; asymmetric gate-oxide thickness; cointegration technique; control-gate-oxide thickness; double-gate MOSFET; driving-gate-oxide thickness; gate-oxide formation; reactive sputtering; resist etch-back process; subthreshold slope; symmetric gate-oxide thickness; threshold-voltage control; tied-gate three-terminal FinFET; titanium nitride-gate FinFET; two-step Si-fin; variable threshold-voltage independent-gate four-terminal FinFET; Circuits; Fabrication; FinFETs; Lithography; Scanning electron microscopy; Sputter etching; Sputtering; Thickness control; Tin; Very large scale integration; Asymmetric gate-oxide thicknesses; FinFET; TiN gate; cointegration; double-gate MOSFET; independent-gate FinFET; threshold-voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.896898

Filename

4212180