DocumentCode :
885996
Title :
Pin Photodiodes Irradiated with 40- and 85-MeV Protons
Author :
Reft, C.S. ; Becher, J. ; Kernell, R.L.
Author_Institution :
Physics Department Old Dominion University Norfolk, Virginia 23508
Volume :
32
Issue :
5
fYear :
1985
Firstpage :
3873
Lastpage :
3880
Abstract :
PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 × 1011 p/cm2, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode´s spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.
Keywords :
Current measurement; Dark current; Diodes; Infrared spectra; Length measurement; PIN photodiodes; Photoconductivity; Protons; Pulse measurements; Radiation effects;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1985.4334522
Filename :
4334522
Link To Document :
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