DocumentCode
886008
Title
Achieving Conduction Band-Edge Effective Work Functions by La2O3 Capping of Hafnium Silicates
Author
Ragnarsson, Lars-Åke ; Chang, Vincent S. ; Yu, Hong Yu ; Cho, Hag-Ju ; Conard, Thierry ; Yin, Kai Min ; Delabie, Annelies ; Swerts, Johan ; Schram, Tom ; De Gendt, Stefan ; Biesemans, Serge
Author_Institution
IMEC, Leuven
Volume
28
Issue
6
fYear
2007
fDate
6/1/2007 12:00:00 AM
Firstpage
486
Lastpage
488
Abstract
Conduction band-edge effective work functions (phim,eff ) are demonstrated with TaCx and TiN by means of La2O3 capping of HfSiOx in a gate-first process flow with CMOS-compatible thermal budget. With TaCx, a 10- Aring-thick La2O3 cap results in a phi m,eff of 3.9 eV with a low equivalent oxide thickness (EOT) increase (1-2 Aring) and unaffected electron mobility. With TiN, non-nitrided La2O3 capping results in a smaller phim,eff reduction at a larger EOT increase, while with post-cap nitridation, the TiN phim,eff is lower at a smaller EOT increase. Results show that the choice of metal and nitridation conditions have significant effects on La2O3 capped stacks
Keywords
MOSFET; atomic layer deposition; conduction bands; electron mobility; hafnium compounds; lanthanum compounds; nitridation; sputtering; tantalum compounds; titanium compounds; work function; 10 angstrom; CMOS-compatible thermal budget; HfSiOx; La2O3; MOSFET; TaCx; TiN; atomic layer deposition; conduction band-edge effective work functions; electron mobility; equivalent oxide thickness; gate-first process flow; hafnium silicates; post-cap nitridation; sputtering; Annealing; Electron mobility; Hafnium oxide; Lanthanum; MOSFETs; Plasmas; Semiconductor device manufacture; Sputtering; Tin; Titanium; Atomic layer deposition (ALD); MOSFETs; electron mobility; hafnium oxide; lanthanum oxide; sputtering; tantalum carbide; titanium nitride; work function;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2007.896900
Filename
4212188
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