Title :
Activation of Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition
Author :
Hamada, Hiroyuki ; Honda, Shogo ; Shono, M. ; Hiroyama, R. ; Yodoshi, K. ; Yamaguchi, Toru
Author_Institution :
Semicond. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
fDate :
3/12/1992 12:00:00 AM
Abstract :
Activation of the Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition (MOCVD) has been successfully improved using post-heat treatment. The p-type carrier concentration and electrical activity on the (Al0.65Ga0.35)0.5In0.5P layers were 1.8*1018 cm-3 and 0.7, respectively. Activation of the Zn acceptors was found to be attributable to the hydrogen in the AlGaInP layer.
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium compounds; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; zinc; AlGaInP:Zn,H; MOCVD; electrical activity; metal organic chemical vapour deposition; misoriented substrates; p-type carrier concentration; post-heat treatment; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920369
