Title :
A 15-ns 1024-bit fully static MOS RAM
Author :
Wada, Toshio ; Kudoh, Osamu ; Nagahashi, Yasuhiko ; Matsue, Shigeki
Abstract :
A fully static 1K bit, TTL compatible, 5-V only MOS RAM has been achieved by using improved process technology and optimized circuit design. Address access time is less than 15 ns and power dissipation is less than 320 mW at room temperature.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Random-access storage; Transistor-transistor logic; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; random-access storage; transistor-transistor logic; Circuit synthesis; Conductivity; Design optimization; Doping; MOSFETs; Parasitic capacitance; Random access memory; Read-write memory; Threshold voltage; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051111
