• DocumentCode
    886050
  • Title

    Heteroface Gallium Arsenide Solar Cells Electron Induced Degradation Analytical Model

  • Author

    Prat, L. ; Moreno, E.Garcia ; Castaner, Luis

  • Author_Institution
    Departament of Electronics E.T.S.I. Telecomunicación UPC Jorge Girona Salgado s/n Barcelona-08034 - Spain
  • Volume
    33
  • Issue
    3
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    1058
  • Lastpage
    1065
  • Abstract
    A model is presented which allows the calculation of the electron induced degradation in heteroface AlGaAs-GaAs solar cells. The temperature dependence of the semiconductor parameters is also included. The radiation effects have been modeled by the minority carrier lifetime degradation. The best agreement with experimental results is obtained when the recombination center capture cross section in p-GaAs region has a value of 4 10-12cm2 and the introduction rate is set to 0.1 cm-1. An optimum thickness of the p-GaAs layer of 0.3¿m has been found. In this geometry, the temperature variation of the efficiency has a coefficient of 32.2K which is consistent with experimental data.
  • Keywords
    Analytical models; Charge carrier lifetime; Degradation; Electrons; Gallium arsenide; Photovoltaic cells; Radiation effects; Radiative recombination; Spontaneous emission; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334533
  • Filename
    4334533
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886050