• DocumentCode
    886113
  • Title

    A new multilevel storage structure for high density CCD memory

  • Author

    Yamada, Michihiro ; Fujishima, Kazuyasu ; Nagasawa, Koichi ; Gamou, Yoshimi

  • Volume
    13
  • Issue
    5
  • fYear
    1978
  • Firstpage
    688
  • Lastpage
    693
  • Abstract
    A multilevel storage (MLS) structure for high density CCD memory is proposed and demonstrated. Using four levels of charge, 2 bits can be stored in one storage cell. Stored charge is transferred by a clocking scheme which provides larger charge-carrying capacity without increasing memory cell size. These techniques make it possible to achieve high packing density without requiring fine patterning.
  • Keywords
    Charge-coupled device circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; charge-coupled device circuits; integrated circuit technology; integrated memory circuits; large scale integration; Bridge circuits; Charge coupled devices; Clocks; Costs; Electrodes; Magnetic memory; Multilevel systems; Power system economics; Random access memory; Read-write memory;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1978.1051120
  • Filename
    1051120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886113