Title :
Automated wafer level QBD measurement for production control
Author :
Evans, Ivor R. ; Garratt, David
Author_Institution :
LSI Logic Ltd., Sidcup, UK
fDate :
2/1/1993 12:00:00 AM
Abstract :
A novel technique is presented for the swift measurement of the charge necessary to induce failure in a thin SiO2 film (QBD). This can form part of a powerful wafer-level reliability evaluation program through inclusion within an automated test system. The method is demonstrated by extracting the distribution of QBD values from across several 150-mm wafers
Keywords :
CMOS integrated circuits; VLSI; automatic test equipment; charge measurement; insulating thin films; process control; production control; silicon compounds; 150 mm; 150-mm wafers; CMOS; automated test system; charge necessary to induce failure; distribution of QBD values; production control; scaling; swift measurement; thin SiO2 film; wafer-level reliability evaluation program; Acceleration; Current density; Current measurement; Density measurement; Design for quality; Electric breakdown; Oxidation; Power system reliability; Production control; Temperature dependence;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
