• DocumentCode
    886142
  • Title

    Automated wafer level QBD measurement for production control

  • Author

    Evans, Ivor R. ; Garratt, David

  • Author_Institution
    LSI Logic Ltd., Sidcup, UK
  • Volume
    6
  • Issue
    1
  • fYear
    1993
  • fDate
    2/1/1993 12:00:00 AM
  • Firstpage
    83
  • Lastpage
    87
  • Abstract
    A novel technique is presented for the swift measurement of the charge necessary to induce failure in a thin SiO2 film (QBD). This can form part of a powerful wafer-level reliability evaluation program through inclusion within an automated test system. The method is demonstrated by extracting the distribution of QBD values from across several 150-mm wafers
  • Keywords
    CMOS integrated circuits; VLSI; automatic test equipment; charge measurement; insulating thin films; process control; production control; silicon compounds; 150 mm; 150-mm wafers; CMOS; automated test system; charge necessary to induce failure; distribution of QBD values; production control; scaling; swift measurement; thin SiO2 film; wafer-level reliability evaluation program; Acceleration; Current density; Current measurement; Density measurement; Design for quality; Electric breakdown; Oxidation; Power system reliability; Production control; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.210662
  • Filename
    210662
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886142