Title :
An 8 mm/sup 2/, 5 V 16K dynamic RAM using a new memory cell"
Author :
Meusburger, Günther ; Horninger, Karlheinrich ; Lindert, Gerold
Abstract :
A small 16K dynamic RAM utilizing a new memory cell configuration is described. The new cell has two selector transistors and makes a very short bit line possible. The memory on 8 mm/SUP 2/ is built in a scaled double polysilicon technology with 3.5 /spl mu/m line width. First samples achieved an access time of 160 ns.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Random-access storage; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; random-access storage; Capacitance; Capacitors; Circuits; DRAM chips; Flip-flops; Latches; Pulse amplifiers; Random access memory; Signal design; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051124
