InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency

Author

Zhang, Ge ; Nappi, J. ; Vanttinen, K. ; Asonen, H. ; Pessa, M.

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

Volume

28

Issue

6

fYear

1992

fDate

3/12/1992 12:00:00 AM

Firstpage

595

Lastpage

597

Abstract

Strained-layer InGaAs/GaAs/GaInP separated confinement heterostructure single quantum-well (SCH-SQW) lasers have been fabricated. These lasers exhibit a low threshold current density of 72 A/cm², a high internal quantum efficiency of 90%, and a low internal waveguide loss of 8.8 cm^-1. The transparency current density and gain coefficient are 29 A cm^-2 and 0.046 cm mu m A^-1, respectively. The characteristic temperature is between 120 and 140 K. These results obtained for InGaAs/GaAs/GaInP lasers are comparable to the best results for InGaAs/GaAs/AlGaAs lasers.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; semiconductor junction lasers; semiconductor quantum wells; 120 to 140 K; 90 percent; InGaAs-GaAs-GaInP; SCH-SQW lasers; characteristic temperature; gain coefficient; internal quantum efficiency; internal waveguide loss; semiconductors; separated confinement heterostructure single quantum-well; threshold current; transparency current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19920375

Filename

126520