• DocumentCode
    886197
  • Title

    Charge Collection by Drift during Single Particle Upset

  • Author

    Shur, Michael ; Lee, Kang ; Choe, Robert ; Berger, Erik

  • Author_Institution
    Department of Electrical Engineering University of Minnesota, Minneapolis MN 55455
  • Volume
    33
  • Issue
    5
  • fYear
    1986
  • Firstpage
    1140
  • Lastpage
    1146
  • Abstract
    An improved analytical model for the drift charge collection during a single particle upset is developed. The model is based on the assumption that initially the plasma column created by an energetic particle is spread by the ambipolar diffusion. Then the collection occurs via the ambipolar drift process at the outer radius of the plasma column where the plasma density drops to a value comparable to the substrate doping. In agreement with experimental data the model predicts that the collected charge increases with the decrease in the substrate doping. A good fit to experimental data for beryllium, oxygen and copper ions is obtained for Si n+p and p+n samples.
  • Keywords
    Analytical models; Doping; Electron mobility; Nonuniform electric fields; Plasma density; Plasma properties; Plasma simulation; Plasma temperature; Semiconductor process modeling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334553
  • Filename
    4334553