DocumentCode
886197
Title
Charge Collection by Drift during Single Particle Upset
Author
Shur, Michael ; Lee, Kang ; Choe, Robert ; Berger, Erik
Author_Institution
Department of Electrical Engineering University of Minnesota, Minneapolis MN 55455
Volume
33
Issue
5
fYear
1986
Firstpage
1140
Lastpage
1146
Abstract
An improved analytical model for the drift charge collection during a single particle upset is developed. The model is based on the assumption that initially the plasma column created by an energetic particle is spread by the ambipolar diffusion. Then the collection occurs via the ambipolar drift process at the outer radius of the plasma column where the plasma density drops to a value comparable to the substrate doping. In agreement with experimental data the model predicts that the collected charge increases with the decrease in the substrate doping. A good fit to experimental data for beryllium, oxygen and copper ions is obtained for Si n+p and p+n samples.
Keywords
Analytical models; Doping; Electron mobility; Nonuniform electric fields; Plasma density; Plasma properties; Plasma simulation; Plasma temperature; Semiconductor process modeling; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1986.4334553
Filename
4334553
Link To Document