Title :
Quantum efficiency and blooming suppression in junction charged-coupled devices
Author :
Hartgring, C.D. ; Kleefstra, M.
fDate :
10/1/1978 12:00:00 AM
Abstract :
The quantum efficiency and blooming suppression in a buried channel three phase junction CCD, used as a line sensor, have been measured. A quantum efficiency of approximately 65 percent, relatively uniform throughout the visible spectrum, has been measured with front illumination. Channel blooming suppression up to about 500 times saturation has been obtained.
Keywords :
Charge-coupled device circuits; Image sensors; charge-coupled device circuits; image sensors; Charge coupled devices; Charge-coupled image sensors; Diodes; Electrons; Lighting; MOS capacitors; MOSFET circuits; Solid state circuits; Substrates; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051130
