Title :
Charge storage in vertically integrated GaAs n-channel JFET/junction capacitor device
Author :
Hetherington, D.L. ; Kelm, J.F. ; Weaver, H.T.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
A GaAs vertical npn structure in which the bottom layer serves as a JFET charge sensing channel has been fabricated and tested as a dynamic memory element. The device can be read nondestructively and exhibits tens of seconds storage times at room temperature. Use of an n channel for sensing charge provides increased sensitivity compared to an earlier p-channel device.
Keywords :
III-V semiconductors; capacitors; gallium arsenide; junction gate field effect transistors; semiconductor storage; GaAs; JFET charge sensing channel; charge storage; dynamic memory element; storage times; vertical n-p-n structure; vertically integrated n-channel JFET/junction capacitor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921191
