Title :
2.5-V bipolar/CMOS circuits for 0.25-μm BiCMOS technology
Author :
Chen, Chih-Liang
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
An ECL circuit with an active pull-down device, operated from a CMOS supply voltage, is described as a high-speed digital circuit for a 0.25-μm BiCMOS technology. A pair of ECL/CMOS level converters with built-in logic capability is presented for effective intermixing of ECL with CMOS circuits. Using a 2.5-V supply and a reduced-swing BiNMOS buffer, the ECL circuit has reduced power dissipation, while still providing good speed. A design example shows the implementation of complex logic by emitter and collector dottings and the selective use of ECL circuits to achieve high performance
Keywords :
BIMOS integrated circuits; digital integrated circuits; integrated circuit technology; 0.25 micron; 2.5 V; BiCMOS technology; CMOS supply voltage; ECL circuit; ECL/CMOS level converters; active pull-down; built-in logic capability; collector dotting; complex logic; design example; digital ICs; emitter dotting; high-speed digital circuit; implementation; intermixing of ECL with CMOS; operation; reduced power dissipation; reduced-swing BiNMOS buffer; scaling; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Digital circuits; Logic circuits; Logic design; Logic devices; Power dissipation; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
