Quantum well interferometric modulator monolithically integrated with 1.55 mu m tunable distributed Bragg reflector laser

Author

Zucker, J.E. ; Jones, K.L. ; Newkirk, M.A. ; Gnall, R.P. ; Miller, B.I. ; Young, Matthew G. ; Koren, U. ; Burrus, C.A. ; Tell, B.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

28

Issue

20

fYear

1992

Firstpage

1888

Lastpage

1889

Abstract

The first monolithically integrated laser/interferometric modulator is reported. The total chip length of 2.5 mm includes a 970 mu m-long strained InGaAs-InGaAsP quantum well gain section, a 230 mu m-long wavelength tuning section containing a distributed Bragg reflector grating, and an 800 mu m-long active length Mach-Zehnder modulator based on electrorefractive InGaAsP-InP quantum wells. 4 V push-pull drive voltage produces 12.5 dB modulation depth with -9 dBm optical power coupled into a cleaved fibre.

Keywords

distributed Bragg reflector lasers; integrated optics; laser transitions; laser tuning; optical modulation; optical waveguides; semiconductor lasers; semiconductor quantum wells; 1.55 micron; InGaAs-InGaAsP; InGaAsP-InP; Mach-Zehnder modulator; distributed Bragg reflector laser; electrorefractive quantum well; interferometric modulator; monolithic integration; semiconductor lasers; strained quantum well; tunable DBR laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19921208

Filename

161234