Title :
A 250-Mb/s, 700-mW, 32-highway×8-b S/P converter LSI with cross-access memory
Author :
Ohtomo, Yusuke ; Suzuki, Masao
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
4/1/1992 12:00:00 AM
Abstract :
A multihighway serial/parallel (S/P) converted LSI chip suitable for the broadband Integrated Services Digital Network (B-ISDN) node interface is presented. The chip, fabricated with 0.8-μm BiCMOS technology, handles 32-highway×8 b of S/P, P/S conversion at up to 250 Mb/s and has a power dissipation of 700 mW. The chip features cross-access memory and a current-cut-type CMOS/ECL interface circuit. Each of these features is described and evaluated. A newly developed BiNMOS-type D-flip-flop (D-FF) is used to speed up the cross-access memory and is compared to a CMOS D-FF
Keywords :
BIMOS integrated circuits; ISDN; digital integrated circuits; flip-flops; large scale integration; 0.7 W; 0.8 micron; 250 Mbit/s; 8 bit; B-ISDN; BiCMOS; BiNMOS-type D-flip-flop; CMOS/ECL interface circuit; D-FF; broadband Integrated Services Digital Network; converter LSI; cross-access memory; features; multihighway serial-parallel convertor; node interface; B-ISDN; BiCMOS integrated circuits; CMOS memory circuits; Delay; Energy consumption; ISDN; Large scale integration; Registers; Road transportation; Switches;
Journal_Title :
Solid-State Circuits, IEEE Journal of
