DocumentCode :
88641
Title :
Getting to the heart of the matter: considerations for large-signal modeling of microwave field-effect transistors
Author :
Parker, Anthony
Author_Institution :
Dept. of Eng., Macquaire Univ., Sydney, NSW, Australia
Volume :
16
Issue :
3
fYear :
2015
fDate :
Apr-15
Firstpage :
76
Lastpage :
86
Abstract :
The field-effect transistor (FET) has just three terminals. One is a gate that controls current flowing between the source and drain terminals. It is simple enough, and so widely accepted as a workhorse in microwave applications, that it must be fairly well understood?or is it? Hidden between those terminals is a treasure trove of complicated interactions that have taken years to sort out. Just when we think we know all we need to know, someone asks for double the power, to move up to the next band, or even to do it all again in a new semiconductor material, and so the story continues.
Keywords :
microwave field effect transistors; semiconductor device models; FET; large-signal modeling; microwave applications; microwave field-effect transistors; semiconductor material; Capacitance; Charge carrier processes; Field effect transistors; Heating; Logic gates; Ports (Computers); Signal processing;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2014.2385306
Filename :
7054701
Link To Document :
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