DocumentCode :
886441
Title :
Dose Calculations for Si-SiO2Si Layered Structures Irradiated by X Rays and 60Co Gamma Rays
Author :
Hamm, R. N.
Author_Institution :
Health and Safety Research Division Oak Ridge National Laboratory Oak Ridge, Tennessee 37831-6123
Volume :
33
Issue :
6
fYear :
1986
Firstpage :
1235
Lastpage :
1239
Abstract :
A Monte Carlo calculation of dose deposition in a layered Si-SiO2-Si structure is described. Results are given for dose distributions for 250-, 500-, and 5000-Ã… SiO2 thicknesses and for irradiation by 8-keV x rays and 60Co gamma rays. Spatial distributions of holes in the 500-Ã… SiO2 layer are presented.
Keywords :
Atomic measurements; Charge carrier processes; Electrons; Gamma rays; Health and safety; Laboratories; MOS devices; Monte Carlo methods; Stochastic processes; Testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1986.4334584
Filename :
4334584
Link To Document :
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