DocumentCode :
886457
Title :
Dependence of threshold voltage of silicon p-channel MOSFET´s on crystal orientation
Author :
Leuenberger, F.
Volume :
54
Issue :
12
fYear :
1966
Firstpage :
1985
Lastpage :
1987
Keywords :
Annealing; Cameras; Etching; Glass; Lenses; MOSFETs; Metallization; NASA; Silicon; Threshold voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.5319
Filename :
1447249
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=886457
