Title :
1 /spl mu/m MOSFET VLSI technology. I. An overview
Author :
Reisman, A. ; Osburn, C.M. ; Critchlow, D.L.
fDate :
4/1/1979 12:00:00 AM
Abstract :
Highlights of various aspects of the technology development are discussed briefly. These include device design, circuit design, hot-electron effects, processing technology, electron-beam lithography, metal silicide interconnections and radiation effects.
Keywords :
Electron beam lithography; Field effect integrated circuits; Integrated circuit technology; Large scale integration; Reviews; electron beam lithography; field effect integrated circuits; integrated circuit technology; large scale integration; reviews; Circuit synthesis; Circuit testing; Lithography; Logic arrays; Logic devices; Logic testing; MOSFET circuits; Paper technology; Programmable logic arrays; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051170
