Title :
A Proposed Scheme for Measuring and Categorizing the Total Ionizing Radiation Dose Response of MOS Devices
Author :
Boesch, Edwin H., Jr.
Author_Institution :
US Army Laboratory Command Harry Diamond Laboratories 2800 Powder Mill Road Adelphi, Maryland 20783-1197
Abstract :
A scheme is proposed for categorizing the longterm total ionizing radiation dose responses of MOS (metal-oxide-semiconductor) devices based on the relative magnitudes of hole trapping and interface-state buildup in the gate oxide layer. Also presented is a procedure for determining the response categories of test devices through standard radiation response measurements.
Keywords :
Circuits; Ionizing radiation; Laboratories; MOS devices; MOSFETs; Powders; Temperature dependence; Testing; Threshold voltage; Time measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334602
