Title :
Excess noise in cooled L-band HEMT amplifiers
Author_Institution :
California Inst. of Technol., Big Pine, CA, USA
Abstract :
Measurements of the noise temperature of a cooled 1-2 GHz HEMT amplifier show excess low frequency noise with several different HEMT devices. The noise appears to be generated in the devices and there is no correlation between the room temperature noise performance and the excess noise observed at 15 K. Illuminating the devices does not decrease the excess noise. The effect may be important in determining the optimum first IF frequency for millimetre-wave receiver systems.
Keywords :
electron device noise; high electron mobility transistors; microwave amplifiers; random noise; solid-state microwave circuits; ultra-high-frequency amplifiers; 1 to 2 GHz; HEMT amplifiers; L-band; UHF; cooled amplifier; excess low frequency noise; noise temperature; optimum first IF frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921237
