• DocumentCode
    886650
  • Title

    Excess noise in cooled L-band HEMT amplifiers

  • Author

    Padin, S.

  • Author_Institution
    California Inst. of Technol., Big Pine, CA, USA
  • Volume
    28
  • Issue
    20
  • fYear
    1992
  • Firstpage
    1933
  • Lastpage
    1935
  • Abstract
    Measurements of the noise temperature of a cooled 1-2 GHz HEMT amplifier show excess low frequency noise with several different HEMT devices. The noise appears to be generated in the devices and there is no correlation between the room temperature noise performance and the excess noise observed at 15 K. Illuminating the devices does not decrease the excess noise. The effect may be important in determining the optimum first IF frequency for millimetre-wave receiver systems.
  • Keywords
    electron device noise; high electron mobility transistors; microwave amplifiers; random noise; solid-state microwave circuits; ultra-high-frequency amplifiers; 1 to 2 GHz; HEMT amplifiers; L-band; UHF; cooled amplifier; excess low frequency noise; noise temperature; optimum first IF frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921237
  • Filename
    161263
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886650