Title :
Elevated electrode integrated circuits
Author :
Sakai, Tetsushi ; Yamamoto, Yousuke ; Kobayashi, Yoshiji ; Yamauti, Hironori ; Ishitani, Tsunehachi ; Sudo, Tsuneta
fDate :
4/1/1979 12:00:00 AM
Abstract :
The authors developed a new device structure for a bipolar integrated circuit with a propagation delay time of 85 ps/gate and a speed-power product of 0.19 pJ. The remarkable feature of this integrated circuit is its overhanging structure of elevated emitter and collector electrodes, resistors, and interconnections. This article describes the structure, fabrication process, and performance of this integrated circuit.
Keywords :
Bipolar integrated circuits; Integrated circuit technology; Integrated logic circuits; bipolar integrated circuits; integrated circuit technology; integrated logic circuits; Bipolar integrated circuits; Electrodes; Electron beams; Electron traps; Integrated circuit technology; MOSFET circuits; Physics; Silicon; Temperature; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051178
