Title :
A simple current model for short-channel IGFET and its application to circuit simulation
fDate :
4/1/1979 12:00:00 AM
Abstract :
The author describes a simple one-dimensional current model for an enhancement-insulated field-effect transistor (EIGFET), taking account of the carrier drift-velocity effect and short-channel effect. The model has been used for simulating various characteristics of an EIGFET of channel length of about 1 /spl mu/m and up, and in the simulation of the waveforms of a ring oscillator where each element transistor has a 1-/spl mu/m channel length. In either case, fairly good agreement was obtained between simulated results and measurements.
Keywords :
Insulated gate field effect transistors; Semiconductor device models; insulated gate field effect transistors; semiconductor device models; Circuit simulation; Dielectric constant; Dielectric measurements; Dielectrics and electrical insulation; Electrons; FETs; Photonic band gap; Ring oscillators; Substrates; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051186
