DocumentCode
886759
Title
A simple current model for short-channel IGFET and its application to circuit simulation
Volume
14
Issue
2
fYear
1979
fDate
4/1/1979 12:00:00 AM
Firstpage
358
Lastpage
367
Abstract
The author describes a simple one-dimensional current model for an enhancement-insulated field-effect transistor (EIGFET), taking account of the carrier drift-velocity effect and short-channel effect. The model has been used for simulating various characteristics of an EIGFET of channel length of about 1 /spl mu/m and up, and in the simulation of the waveforms of a ring oscillator where each element transistor has a 1-/spl mu/m channel length. In either case, fairly good agreement was obtained between simulated results and measurements.
Keywords
Insulated gate field effect transistors; Semiconductor device models; insulated gate field effect transistors; semiconductor device models; Circuit simulation; Dielectric constant; Dielectric measurements; Dielectrics and electrical insulation; Electrons; FETs; Photonic band gap; Ring oscillators; Substrates; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1979.1051186
Filename
1051186
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