Title :
Particle Damage Effects in GaAs JFET Test Structures
Author :
Campbell, A.B. ; Knudson, A.R. ; Stapor, W.J. ; Summers, G. ; Xapsos, M.A. ; Jessee, M. ; Palmer, T. ; Zuleeg, R. ; Dale, C.J.
Author_Institution :
Naval Research Laboratory, Washington, DC 20375
Abstract :
Damage measurements on specially designed ion implanted GaAs JFET, resistor, and Hall-effect test structures using neutrons, protons, helium ions, and sulfur ions have shown the relationship of damage rates with particle type and implant dose.
Keywords :
Circuit testing; Degradation; Doping; Gallium arsenide; Implants; Intrusion detection; Ion implantation; Microelectronics; Neutrons; Resistors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334619
