Title :
Radiation-Induced Interface Traps in Power Mosfets
Author :
Singh, Gurbax ; Galloway, Kenneth F. ; Russell, Thomas J.
Abstract :
Methods for estimating radiation-induced interface trap density from the current-voltage (I-V) characteristics of MOSFETs are described and applied to commercially available power MOSFETs. The power MOSFETs show severe degradation on radiation exposure with the effects of positive oxide trapped charge dominating; however, interface trap buildup is significant. The results are compared to experimental measurements available on other technologies.
Keywords :
Charge measurement; Current measurement; Degradation; Density measurement; Electric variables; Ionizing radiation; MOSFETs; Power measurement; Threshold voltage; Transconductance;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334622
