Title :
Wide-Bandgap Solid-State Circuit Breakers for DC Power Systems: Device and Circuit Considerations
Author :
Shen, Z. John ; Sabui, Gourab ; Zhenyu Miao ; Zhikang Shuai
Author_Institution :
Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
DC circuit protection applications provide a unique market opportunity for wide-bandgap (WBG) semiconductors, which are outside the conventional focus on power electronic converters. This paper presents an overview of emerging dc power systems, the needs for dc solid-state circuit breakers (SSCBs), and the benefits and advantages of various WBG SSCB concepts. Furthermore, a new class of self-powered SSCBs based on SiC or GaN normally-ON switching devices is proposed in this paper. One implementation of the SSCB concept based on a 1200 V SiC JFET experimentally demonstrated turn-off of a fault current of 125 A at a dc voltage of 400 V within 1 μs without requiring any external power supply. The SSCB detects short-circuit faults by sensing its drain-source voltage rise and draws power from the fault condition to turn off the SiC JFET. Various implementations of the SSCB concept for unipolar and bipolar capability using both SiC and GaN are also discussed from both device and circuit perspectives. It is concluded that very low ON-resistance normally-ON WBG switching devices are excellent candidates for the emerging SSCB applications.
Keywords :
circuit breakers; power semiconductor switches; wide band gap semiconductors; DC circuit protection applications; DC power systems; DC solid-state circuit breakers; JFET; SSCB; WBG semiconductors; fault current turn-off; normally-on switching devices; wide-bandgap solid-state circuit breakers; Circuit breakers; Circuit faults; JFETs; Logic gates; Power conversion; Power systems; Silicon carbide; GaN HEMT; SiC JFET; solid-state circuit breaker (SSCB); wide-bandgap (WBG) semiconductors; wide-bandgap (WBG) semiconductors.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2384204