Title :
Characteristics of the Breakdown Voltage of Power MOSFETs after Total Dose Irradiation
Author :
Pugh, R.D. ; Johnston, A.H. ; Galloway, K.F.
Author_Institution :
Nuclear Engineering Dept., University of Washington, Seattle, Washington and AFIT/CIRD, Wright-Patterson AFB, OH
Abstract :
The effects of total dose irradiation on the breakdown voltage of p-channel power MOSFETs are examined. Although breakdown voltage for p-channel devices increased at higher dose levels, as expected, some devices exhibited an initial decrease in breakdown at very low levels of total dose. The interaction of ionizing radiation effects with the junction termination methods designed to increase the voltage at which breakdown occurs is analyzed.
Keywords :
Breakdown voltage; Degradation; Design methodology; Etching; Interface states; Ionizing radiation; MOSFETs; Manufacturing; P-n junctions; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334623
