• DocumentCode
    886806
  • Title

    Characteristics of the Breakdown Voltage of Power MOSFETs after Total Dose Irradiation

  • Author

    Pugh, R.D. ; Johnston, A.H. ; Galloway, K.F.

  • Author_Institution
    Nuclear Engineering Dept., University of Washington, Seattle, Washington and AFIT/CIRD, Wright-Patterson AFB, OH
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • Firstpage
    1460
  • Lastpage
    1464
  • Abstract
    The effects of total dose irradiation on the breakdown voltage of p-channel power MOSFETs are examined. Although breakdown voltage for p-channel devices increased at higher dose levels, as expected, some devices exhibited an initial decrease in breakdown at very low levels of total dose. The interaction of ionizing radiation effects with the junction termination methods designed to increase the voltage at which breakdown occurs is analyzed.
  • Keywords
    Breakdown voltage; Degradation; Design methodology; Etching; Interface states; Ionizing radiation; MOSFETs; Manufacturing; P-n junctions; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334623
  • Filename
    4334623
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886806