Title :
Automated bias control (ABC) circuit for high-performance VLSIs
Author :
Kuroda, Tadahiro ; Fukunaga, Toshiyuki ; Matsuo, Kenji ; Kasai, Kazuhiko ; Hirata, Ayako ; Fujii, Shinji ; Kimura, Masahiro ; Suzuki, Hiroaki
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
4/1/1992 12:00:00 AM
Abstract :
A biasing scheme for sensing circuits, namely an automated bias control (ABC) circuit, for high-performance VLSIs is described. The ABC circuit can automatically gear the output level of sensing circuits to the input threshold voltage of the succeeding CMOS converters. The sensing performance can be accelerated with the ABC circuit either by reducing the excessive signal level margin between the sensing circuits and the CMOS converters or by reducing extra stages of signal amplification. Since feedback control of the ABC circuit ensures correct DC biasing even under large process deviations and circuit condition changes, a wider operation margin can also be obtained. Three successful applications of the ABC circuit are reported: a sense amplifier, an address transition detector (ATD), and an ECL-CMOS input buffer. A 64-kb BiCMOS SRAM employing the proposed sense amplifier and the ATD has been fabricated with a 0.8-μm 9-GHz BiCMOS technology. The SRAM has an address access time of 4.5 ns
Keywords :
BIMOS integrated circuits; CMOS integrated circuits; SRAM chips; VLSI; buffer circuits; feedback; 0.8 micron; 4.5 ns; 64 kbit; 9 GHz; BiCMOS SRAM; DC biasing; ECL-CMOS input buffer; address access time; address transition detector; automated bias control; feedback control; high-performance VLSIs; input threshold voltage; sense amplifier; sensing circuits; Acceleration; Automatic control; BiCMOS integrated circuits; Detectors; Feedback circuits; Feedback control; Gears; Random access memory; Threshold voltage; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of