DocumentCode
886841
Title
Process modeling and design procedure for IGFET thresholds
Author
Geipel, Henry J., Jr. ; Fortino, Andres G.
Volume
14
Issue
2
fYear
1979
fDate
4/1/1979 12:00:00 AM
Firstpage
430
Lastpage
435
Abstract
An empirically based process modelling system is discussed for determining ion-implant conditions used to achieve specific IGFET thresholds. Experimental techniques are applied to insure consistency between physical process phenomenon and the numerical algorithms employed. Device threshold design results are presented for active and parasitic IGFETs in a dual polysilicon-gate technology. The utility of this design procedure in multistep processes for determining the effects of various parameters such as screen thickness, final peak concentration, dose, and energy are considered.
Keywords
Insulated gate field effect transistors; Semiconductor device models; insulated gate field effect transistors; semiconductor device models; FETs; Fabrication; Heating; Implants; Numerical models; Predictive models; Process design; Semiconductor impurities; Semiconductor process modeling; Substrates;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1979.1051194
Filename
1051194
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