Multigigahertz voltage-controlled oscillators in advanced silicon bipolar technology

Author

Soyuer, Mehmet ; Warnock, James D.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

27

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

668

Lastpage

670

Abstract

Relaxation-type monolithic silicon bipolar voltage-controlled oscillators (VCOs) with center frequencies ranging from 1.5 to 5 GHz are described. The maximum oscillating frequency achieved is 7.4 GHz. The VCOs dissipate about 70 mW from a 3.6-V supply, including the output buffer and voltage-to-current converter stages. Two types of on-chip timing capacitor structure and various configurations used in achieving these results are described. A wide tuning range sufficient for covering the normal process tolerances and supply variations expected in a practical environment was achieved. The circuits were fabricated in an advanced 0.8-μm double-poly self-aligned bipolar technology

Keywords

MMIC; bipolar integrated circuits; elemental semiconductors; microwave oscillators; relaxation oscillators; silicon; tuning; variable-frequency oscillators; 0.8 micron; 1.5 to 7.4 GHz; 3.6 V; 70 mW; MMIC; SHF; Si bipolar technology; UHF; VFO; double-poly; multigigahertz VCO; on-chip timing capacitor structure; output buffer; self-aligned bipolar technology; voltage-controlled oscillators; wide tuning range; Capacitors; Circuits; Clocks; Frequency estimation; Phase locked loops; Silicon; Timing; Tuning; Voltage; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.126560

Filename

126560